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Analysis of DC Characteristics in GaN-Based Metal-Insulator-Semiconductor High Electron Mobility Transistor with Variation of Gate Dielectric Layer Composition by Considering Self-Heating Effectopen access

Hwang, In-Tae; Jang, Kyu-Won; Kim, Hyun-Jung; Lee, Sang-Heung; Lim, Jong-Won; Yang, Jin-Mo; Kwon, Ho-Sang; Kim, Hyun-Seok

ArticleIssue Date2019CitationAPPLIED SCIENCES-BASEL, v.9, no.17PublisherMDPI
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