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Impact of graphene and single-layer BN insertion on bipolar resistive switching characteristics in tungsten oxide resistive memory

Kim, Jongmin; Kim, Duhwan; Jo, Yongcheol; Han, Jaeseok; Woo, Hyeonseok; Kim, Hyungsang; Kim, K. K.; Hong, J. P.; Im, Hyunsik

ArticleIssue Date2015CitationTHIN SOLID FILMS, v.589, pp 188 - 193PublisherELSEVIER SCIENCE SA
SCISCIESCOPUS
Metal-doped ZnS(O) thin films on glass substrates using chemical bath deposition

Inamdar, Akbar I.; Lee, Seulgi; Kim, Duhwan; Gurav, K. V.; Kim, J. H.; Im, Hyunsik; Jung, Woong; Kim, Hyungsang

ArticleIssue Date2013CitationTHIN SOLID FILMS, v.537, pp 36 - 41PublisherELSEVIER SCIENCE SA
SCISCIESCOPUSKCI
Multi-valued Resistive Switching Characteristics in WOx/AlOy Heterojunction Resistive Switching Memories

Jo, Yongcheol; Jang, B. U.; Kim, Jongmin; Kim, Duhwan; Woo, Hyeonseok; Kim, Inho; Park, Wooyoung; Im, Hyunsik; Kim, Hyungsang

ArticleIssue Date2014CitationJOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.64, no.2, pp L173 - L176PublisherKOREAN PHYSICAL SOC
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