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SCIESCOPUS
Analysis of Operational Characteristics of AlGaN/GaN High-Electron-Mobility Transistor with Various Slant-Gate-Based Structures: A Simulation Studyopen access

Lee, Jun-Ho; Choi, Jun-Hyeok; Kang, Woo-Seok; Kim, Dohyung; Min, Byoung-Gue; Kang, Dong Min; Choi, Jung Han; Kim, Hyun-Seok

ArticleIssue Date2022CitationMicromachines, v.13, no.11, pp 1 - 16PublisherMDPI
SCIESCOPUS
Enhanced Operational Characteristics Attained by Applying HfO2 as Passivation in AlGaN/GaN High-Electron-Mobility Transistors: A Simulation Studyopen access

Choi, Jun-Hyeok; Kang, Woo-Seok; Kim, Dohyung; Kim, Ji-Hun; Lee, Jun-Ho; Kim, Kyeong-Yong; Min, Byoung-Gue; Kang, Dong Min; Kim, Hyun-Seok

ArticleIssue Date2023CitationMicromachines, v.14, no.6, pp 1 - 14PublisherMDPI
SCIESCOPUS
Exploring the experimental study and density functional theory calculations of symmetric and asymmetric chalcogen atoms interacted molybdenum dichalcogenides for lithium-ion batteriesopen access

Vikraman, Dhanasekaran; Hussain, Sajjad; Abbas, Zeesham; Karuppasamy, K.; Kang, Woo-Seok; Santhoshkumar, P.; Kathalingam, A.; Jung, Jongwan; Kim, Hyun-Seok

ArticleIssue Date2023CitationJournal of Materials Science & Technology, v.162, pp 44 - 56PublisherElsevier Ltd
SCIESCOPUS
Optimization of Gate-Head-Top/Bottom Lengths of AlGaN/GaN High-Electron-Mobility Transistors with a Gate-Recessed Structure for High-Power Operations: A Simulation Studyopen access

Kang, Woo-Seok; Choi, Jun-Hyeok; Kim, Dohyung; Kim, Ji-Hun; Lee, Jun-Ho; Min, Byoung-Gue; Kang, Dong Min; Choi, Jung Han; Kim, Hyun-Seok

ArticleIssue Date2024CitationMicromachines, v.15, no.1, pp 1 - 15PublisherMultidisciplinary Digital Publishing Institute (MDPI)
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