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Temperature dependence of ballistic mobility in a metamorphic InGaAs/InAlAs high electron mobility transistor

Lee, Jongkyong; Gang, Suhyun; Jo, Yongcheol; Kim, Jongmin; Woo, Hyeonseok; Han, Jaeseok; Kim, Hyungsang; Im, Hyunsik

ArticleIssue Date2014CitationJOURNAL OF APPLIED PHYSICS, v.116, no.4PublisherAMER INST PHYSICS
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