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Oxygen- and photoresist-related interface states of 4H-SiC Schottky diode observed by deep-level transient spectroscopy

Kang, Hong Jeon; Moon, Jeong Hyun; Bahng, Wook; Lee, Suhyeong; Kim, Hyunwoo; Koo, Sang-Mo; Lee, Dohyun; Lee, Dongwha; Cho, Hoon-Young; Heo, Jaeyeong, et al.

ArticleIssue Date2017CitationJOURNAL OF APPLIED PHYSICS, v.122, no.9PublisherAMER INST PHYSICS
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